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CoolSiC™ MOSFET products in 1700 V, 1200 V and 650 V Silicon Carbide CoolSiC™ MOSFET represents the best performance, reliability and ease of use for system designers.
These devices bring all the advantages of SiC. Coupled with high EMI performance.
Using Samsung 8″ Wafer Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD Diode Fast Recovery Time Package – Ipack, D-pack, TO 220, TO247
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge Extended Safe Operating Area Lower RDS(ON) 100% Avalanche Tested 100% UIS Tested, 100% Rg Tested Package – Ipack, D-pack, TO220, TO247
High breakdown voltage High speed switching Low forward voltage drop, low power loss High-efficiency operation Package – TO220, TO247
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