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Infineon’s n-channel and p-channel power Mosfets


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Infineon’s n-channel and p-channel power Mosfets


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Infineon’s n-channel and p-channel power Mosfets


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Features
1. Improved hard communication ruggedness, Hard Switching Behaviour, Reduced Energy stored in output capacitance (500 V Cool MOS), 2. Good Body Diode Ruggedness (600V CoolMOS), 3. Ease of Use and fast in design (CoolMOS 600-650VCE), 4. Easy control of switching behaviour, More efficient, compact, lighter and cooler (CoolMOS 600 & 650V C6/E6) 5. Reduced energy stored in output capacitance, Lower gate charge (CoolMOS 650V, C7) 6. Limited overvoltage overshooting during hard communication- self limiting dv/dt & di/dt, reduced turn on and turn off delay times (CoolMOS 650 V CFDA), 7. Low specific on state resistance, Very low energy storage into output capacitance @400V, Low gate charge (CoolMOS 800-900 V, C3),

Segments

  • INDUSTRIAL ELECTRONICS
  • RAILWAYS
  • LIGHTING
  • AUTOMOTIVE
  • TELECOM
  • RENEWABLE ENERGY
  • CONSUMER ELECTRONICS
  • UPS

Applications

  • Server Power Supply, HID Lamp ballast
  • Motion Control
  • LED Light Engines, LED Lamps, Automative LED Lighting,
  • E bikes, Small Electric Vehicles, Small 1/2 cylinder combustion engine
  • Telecom Power Supply, Smartphone Charger
  • Solar Energy System, PWM stages for Solar Inverter
  • TV Power Supply, Laptop Adapter, Gaming Consoles, LCD TV.
  • UPS

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